View AO4813L_1210192.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4813 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4813 is Pb-free (meets ROHS & Sony 259 specifications). AO4813L is a Green Product ordering option. AO4813 and AO4813L are electrically identical.
Features
VDS (V) = -30V ID = -7.1 A (V GS = -10V) RDS(ON) < 25m (VGS = -10V) RDS(ON) < 40m (VGS = -4.5V)
SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 20 -7.1 -5.6 -30 2 1.28 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 48 74 35
Max 62.5 110 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4813
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-7.1A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-5.6A Forward Transconductance VDS=-5V, ID=-7.1A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.4 -30 20 27 29 19.6 -0.7 -1 -4.2 1573 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 319 211 6.7 30.9 VGS=-10V, VDS=-15V, ID=-7.1A 16.1 8 4.4 9.5 VGS=-10V, VDS=-15V, RL=2.2, RGEN=3 IF=-7.1A, dI/dt=100A/s 8 44.2 22.2 25.5 14.7 25 33 40 -2 Min -30 -1 -5 100 -2.7 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4813
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30 -10V 25 20 -ID (A) -ID(A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 40 Normalized On-Resistance 35 RDS(ON) (m) 30 25 VGS=-10V 20 15 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 50 RDS(ON) (m) 40 125C 30 20 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=-7.1A 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=-4.5V 1.60 ID=-7.1A 1.40 VGS=-10V -3.5V VGS=-3V -5V -4V 20 15 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 30 25 VDS=-5V
1.20
VGS=-4.5V ID=-5.6A
1.00
0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO4813
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 24 28 32 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-7.1A Capacitance (pF) 2250 2000 1750 1500 1250 1000 750 500 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss
100.0
TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 10s 100s 1ms 10ms
40 30 Power (W) 20 10
TJ(Max)=150C TA=25C
-ID (Amps)
10.0
1.0
1s 10s DC
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01
PD Ton T
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.

▲Up To Search▲

Price & Availability of AO4813L

	To Download AO4813L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .